Low Power and Reliable SRAM Memory Cell and Array Design (Paperback, 2011 ed.)


Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

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Product Description

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

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Product Details

General

Imprint

Springer-Verlag

Country of origin

Germany

Series

Springer Series in Advanced Microelectronics, 31

Release date

November 2013

Availability

Expected to ship within 10 - 15 working days

First published

2011

Editors

,

Dimensions

235 x 155 x 8mm (L x W x T)

Format

Paperback

Pages

144

Edition

2011 ed.

ISBN-13

978-3-642-27018-5

Barcode

9783642270185

Categories

LSN

3-642-27018-2



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