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Poly-SiGe for MEMS-above-CMOS Sensors (Paperback, Softcover reprint of the original 1st ed. 2014) Loot Price: R2,094
Discovery Miles 20 940
Poly-SiGe for MEMS-above-CMOS Sensors (Paperback, Softcover reprint of the original 1st ed. 2014): Pilar Gonzalez Ruiz, Kristin...
Poly-SiGe for MEMS-above-CMOS Sensors (Paperback, Softcover reprint of the original 1st ed. 2014): Pilar Gonzalez Ruiz, Kristin...

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Poly-SiGe for MEMS-above-CMOS Sensors (Paperback, Softcover reprint of the original 1st ed. 2014)

Pilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw

Series: Springer Series in Advanced Microelectronics, 44

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Loot Price R2,094 Discovery Miles 20 940 | Repayment Terms: R195 pm x 12*

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Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ï ­m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

General

Imprint: Springer
Country of origin: Netherlands
Series: Springer Series in Advanced Microelectronics, 44
Release date: July 2013
First published: 2014
Authors: Pilar Gonzalez Ruiz • Kristin De Meyer • Ann Witvrouw
Dimensions: 235 x 155 x 12mm (L x W x T)
Format: Paperback
Pages: 199
Edition: Softcover reprint of the original 1st ed. 2014
ISBN-13: 978-9401781404
Barcode: 9789401781404
Categories: Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture
Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture > General
Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials
Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials > General
LSN: 9401781400

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