Advances in Power Semiconductors and Power Integrated Circuits (Spiral bound)

This report combines two earlier reports under one title - reports 91-0221D and 92-0173D. The first report identifies some of the technology changes affecting power semiconductor devices, and predicts future trends. It also looks at the implications of these technology changes for applications. Five device families are listed, and one or more devices from four areas are examined in detail. Device costs per continuous kVA of converter output are given and trade-offs for switching and conduction losses in IGBTs are listed. Application trends for various classes of semiconductor devices are tabulated, and the improvement in IGBTs is highlighted. A list of 40 references is also included. The second report presents a review of published literature on power integrated circuit (PIC) technology, and draws upon work on high-voltage H-bridge drivers and current sensing MOSFETS. PICs, or smart power ICs, are defined and their functions are categorized. A broad spectrum of devices that may be labelled as PICs are listed. The market size, breakdown and applications are presented. Partitioning is touched on, and the advantages and disadvantages of using a PIC rather than separate power and control devices are highlighted. One section covers PIC processes, including those in widespread use, process choice and the difference between power and logic processes and the power output stage. Another section covers PIC technology, including dieletric isolation, high-voltage interconnects, lifetime killing, ground separation, two-chip arrangements and current sensing. There are also sections on application issues, power ASICs, computer aided design (CAD) and packaging. References are made to programmable PICs, radiation hardening and linear PICs. There is a list of 170 references - the referenced devices are tabulated. This report was produced for members of ERA's Technical Services Scheme. This title is now availble outside the EEC.