In this report, we describe the work done to improve the material
and device properties of a-Si: H and a-(Si, Ge): H alloys prepared
using electron cyclotron resonance (ECR) plasma deposition and to
understand the growth chemistry. Major results were obtained in the
following areas: 1) Influence of plasma chemistry on properties and
stability of a-Si: H single-junction solar cells; 2) Fabrication of
good-quality tandem-junction cells. We made tandem-junction
a-Si/a-Si cells with excellent voltages and fill factors using the
H-ECR process; 3) Growth of high-quality a-(Si, Ge): H films using
the ECR deposition process; 4) Fabrication of single-junction
devices in a-(Si, Ge): H for diagnosing the material; and 5)
Graded-gap cells in a-(Si, Ge): H. Good devices were produced using
a graded-gap I-layer. In summary, the most important finding from
our research has been that plasma chemistry plays a very important
role in determining the properties of the materials, particularly
the properties of the a-(Si, Ge): H alloy system. Even in a-Si: H,
plasma chemistry plays a role in determining stability. This result
suggests that by deliberately changing the chemistry of deposition,
one may be able to further improve the a-(Si, Ge): H materials
system and make its properties comparable to the properties of
a-Si: H. The ECR reactor has proved to be a very useful chemical
tool, with excellent control over g
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||Paperback - Trade
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