Heteroepitaxy has evolved rapidly in recent years. With each new
wave of material/substrate combinations, our understanding of how
to control crystal growth becomes more refined. Most books on the
subject focus on a specific material or material family, narrowly
explaining the processes and techniques appropriate for each.
Surveying the principles common to all types of semiconductor
materials, Heteroepitaxy of Semiconductors: Theory, Growth, and
Characterization is the first comprehensive, fundamental
introduction to the field.
This book reflects our current understanding of nucleation,
growth modes, relaxation of strained layers, and dislocation
dynamics without emphasizing any particular material. Following an
overview of the properties of semiconductors, the author introduces
the important heteroepitaxial growth methods and provides a survey
of semiconductor crystal surfaces, their structures, and
nucleation. With this foundation, the book provides in-depth
descriptions of mismatched heteroepitaxy and lattice strain
relaxation, various characterization tools used to monitor and
evaluate the growth process, and finally, defect engineering
approaches. Numerous examples highlight the concepts while
extensive micrographs, schematics of experimental setups, and
graphs illustrate the discussion.
Serving as a solid starting point for this rapidly evolving
area, Heteroepitaxy of Semiconductors: Theory, Growth, and
Characterization makes the principles of heteroepitaxy easily
accessible to anyone preparing to enter the field.
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