Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon-Based Mid-Gap and Low-Gap Cells (Paperback)

An overriding theme of the work described in this report has been the effect of partial crystallinity, or the approach to partial crystallinity, on the electronic properties of a-Si: H. This includes, of course, how degradation or the relative stability of these films is affected by the approach to, or onset of, microcrystallinity