This report describes studies on glow discharge (GD) and hot-wire
a-Si-based samples by the University of North Carolina-Chapel Hill
during Phase I. We have characterized H-bonding and its
light-induced changes by using infrared (IR) and differential IR
(DIR). For the less stable film, there is a simultaneous decrease
2040 cm-1 and increase 1880 cm-1; for the more-stable samples, the
DIR near 2000 cm-1 increases upon light-soaking. Nuclear magnetic
resonance (NMR) dipolar relaxation time T1D of the clustered H is
slightly shorter, but the T1D of the isolated H is 4 times longer
in hot-wire (HW) film than that in GD films. The results indicate
that the local motion of the isolated H is much slower in HW
compared to that in GD film. High-Temperature NMR results show a
second narrow line (less than 1 kHz wide) as the temperature is
raised. In stress measurements, it is clearly shown that HW films
with lower hydrogen content show lower compression. A photoinduced
increase of the compression on the order of 10-4 of the initial
value upon light-soaking was found to be similar in all a-Si: H
films which exhibit different amounts of Staebler-Wronski (SW)
degradation. Hence, the volume expansion is not directly related to
SW effect. Also, we have measured the electric field profile in
a-Si: H and a-SiGe: H solar cells, and the results agreed with
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