Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
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Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Imprint | Crc Press |
Country of origin | United States |
Release date | December 2007 |
Availability | Expected to ship within 12 - 17 working days |
First published | December 2007 |
Authors | John D. Cressler |
Dimensions | 254 x 178 x 17mm (L x W x T) |
Format | Hardcover |
Pages | 264 |
ISBN-13 | 978-1-4200-6685-2 |
Barcode | 9781420066852 |
Categories | |
LSN | 1-4200-6685-4 |