This work is mainly dedicated to the study of spin dependent
transport in magnetic nanostructures. The principal objective is
the optimization of the magnetoresistive performance of such
structures, in order to built high density Magnetic Random Access
Memories (MRAM). Nevertheless, new resistive properties are also
found, that could be useful for another type of non-volatile memory
device, in this case, Resistive Random Access Memories (ReRAM). The
book is basically divided into two parts: the first one considers
the theoretical analysis of perfect multilayered magnetic junctions
with quantum coherent transport (in the context of Landauer
formula), revealing an impressive enhancement of the
magnetoresistance, in the so called shallow band regime; the second
one is dedicated to the experimental study of magnetic granular
multilayers, ten granular Co80Fe20 layers embedded into an
insulating Al2O3 matrix, showing interesting resistive and
capacitive switching properties, and complemented by a theoretical
description of percolation charge transport in these materials
(using a mean-field approach).
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