This book presents the art of advanced MOSFET modeling for
integrated circuit simulation and design. It provides the essential
mathematical and physical analyses of all the electrical,
mechanical and thermal effects in MOS transistors relevant to the
operation of integrated circuits. Particular emphasis is placed on
how the BSIM model evolved into the first ever industry standard
SPICE MOSFET model for circuit simulation and CMOS technology
development. The discussion covers the theory and methodology of
how a MOSFET model, or semiconductor device models in general, can
be implemented to be robust and efficient, turning device physics
theory into a production-worthy SPICE simulation model. Special
attention is paid to MOSFET characterization and model parameter
extraction methodologies, making the book particularly useful for
those interested or already engaged in work in the areas of
semiconductor devices, compact modeling for SPICE simulation, and
integrated circuit design.
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